High-Voltage Power Semiconductor Devices
Join us for a Power & Energy Society talk by Dr. Martin Manley titled: ''High-Voltage Power Semiconductor Devices".

Approximately 10% of generated electricity is squandered due to losses in inefficient power conversion. Eliminating this wasted energy is one of the best ways to reduce the world's reliance on fossil fuels and decrease greenhouse gas emissions.

This seminar will briefly review the importance of high-voltage power semiconductor devices for achieving high-efficiency power conversion and minimizing wasted energy. Starting from some basic device physics concepts, the structure of the conventional silicon vertical power MOSFET will be reviewed and its limitations discussed. This MOSFET structure and operation will be compared to that of the insulated-gate bipolar transistor (IGBT).

Various techniques for improving the efficiency of MOSFET power devices will be presented - including lateral RESURF and vertical "Super-Junction" devices. Looking to the future, the two most promising compound semiconductor devices will be reviewed. The relative merits of GaN and SiC power devices will be compared to existing silicon devices, and we will discuss the most promising applications for these new devices.

Dr. Martin Manley is a Senior Director of Technology Development at Power Integrations, San Jose CA, USA.
Date
2016-05-05

Time
17:00 - 18:00

Location
35/1005

Presented by
Dr. Martin Manly, Power Integrations, San Jose CA, USA.

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